Preparation and characterization of indium phosphide homojunction solar cells by liquid-phase epitaxy

Thesis/Dissertation · Thu Jan 01 00:00:00 EST 1987

OSTI ID:6300903

Choi, K Y

P/N indium phosphide homojunction solar cells have been studied both theoretically and experimentally. A new contracting scheme for InP solar cells is developed to overcome the drawbacks of the conventional shallow-junction cells. In the modified structure, an InGaAs contacting layer is incorporated in the cell structure to reduce contact resistance and to eliminate surface-spiking problems at the front surface. A simple analytical model is used to simulate the performance of the p/n InP homojunction solar cells. Optimum cell structure was investigated. The optimal-hole concentration in the emitter region should be larger than 2 x 10/sup 18/ cm/sup -3/, the optimal electron concentration in the base region is around 5 x 10/sup 17/ cm/sup -3/, and the optimal junction depth is 0.2 ..mu..m. The optimum antireflection coatings and patterns for the front grid contact are also investigated. Liquid-phase-epitaxy growth technique and wafer-processing procedures were established to fabricate p/n InP homojunction solar cells which consist of a new contacting scheme.

• Research Organization: Arizona State Univ., Tempe (USA)
• OSTI ID: 6300903
• Resource Relation: Other Information: Thesis (Ph. D.)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
HOMOJUNCTIONS
LIQUID PHASE EPITAXY
INDIUM PHOSPHIDE SOLAR CELLS
ANTIREFLECTION COATINGS
MATHEMATICAL MODELS
PERFORMANCE
SIMULATION
COATINGS
DIRECT ENERGY CONVERTERS
EPITAXY
EQUIPMENT
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion