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Title: Indium phosphide/cadmium sulfide thin-film terrestrial solar cells. Final report, 1 September 1976-30 November 1978

Technical Report ·
OSTI ID:6143494

The planar reactive deposition (PRD) technique was developed as a practical low-temperature technique for depositing thin films of InP. Indium phosphide was epitaxially deposited onto InP and CdS single-crystal substrates in the 320 to 420/sup 0/C temperature range. Undoped films deposited on semi-insulating substrates are n-type with room-temperature mobilities as high as 4062 cm/sup 2//Vsec, corresponding to a residual active impurity concentration of a few times 10/sup 16/ cm/sup -3/. InP was also deposited onto polycrystalline thin films of CdS. Depletion of Cd from the thin films restricts the InP-on-CdS-on-glass all-thin-film solar cell concept to processing temperatures below 350/sup 0/C. The quality of the InP thin films made by our PRD process and their suitability as layers in thin-film solar cells was established by comparing CdS-on-InP solar cells made with our intermediate PRD InP layers with cells made only with commercial InP single-crystal substrates. To this effect, single-crystal CdS-on-InP cells were prepared by depositing CdS onto single crystals of commercial p-type InP (reference cells) and onto intermediate micrometer-thick layers of Be-doped p-type InP, the latter deposited earlier onto the commercial InP substrates over the 320 to 400/sup 0/C range by the PRD approach. The efficiency of the best reference cells and the best cells using the intermediate PRD thin films as the light-absorbing layer were both approximately 10% (air mass 2 illumination with no antireflection coating). Cell efficiency was not found to depend on the temperature of preparation of the intermediate single-crystal PRD layer.

Research Organization:
Hughes Research Labs., Malibu, CA (USA)
DOE Contract Number:
AC04-76ET20254
OSTI ID:
6143494
Report Number(s):
DOE/ET/20254-T1; ON: DE83009684
Country of Publication:
United States
Language:
English