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Title: Electron channeling and EBIC studies of edge-supported pulling silicon sheets

Journal Article · · IEEE Trans. Electron Devices; (United States)

The dominant grain structure in edge-supported pulling silicon sheets has been studied by electron channeling in a scanning electron microscope. For unseeded polycrystalline silicon sheets in which equilibrium grain structures have been attained, it was found that the dominant grain structure is long, narrow grains with surface normals less than twenty degrees off the (011) direction. The plane that is parallel to the growth direction and perpendicular to the surfaces for most of these grains is very close to (111). The electronic quality of the grains, determined by electron-beam-induced current measurements, has been correlated with crystallographic orientations determined by electron channeling. It was observed that grains with this kind of grain structure tend to have better electronic quality, i.e., less electrically active intragrain defects, than the random grains. These findings are consistent with past experience that larger grained polycrystalline silicon sheets and higher efficiency solar cells can be obtained with seeded growth using seed orientations similar to the afore mentioned dominant grain structure.

Research Organization:
Solar Electric Conversion Research Division, Solar Energy Research Institute, Golden, CO
OSTI ID:
6284713
Journal Information:
IEEE Trans. Electron Devices; (United States), Vol. ED-31:5
Country of Publication:
United States
Language:
English