Electron channeling and EBIC studies of polycrystalline silicon sheets

Conference · Tue May 01 00:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5050564

Tsuo, Y S; Matson, R J

Electron channeling and EBIC studies have been performed on silicon sheets grown by the edgesupported pulling (ESP) and low-angle silicon sheet (LASS) processes. The authors have found that the dominant grain structure of the ESP sheets is long, narrow grains with surface normals oriented near (011); grains with this structure tend to have better electronic quality than random grains. They have also studied the twin-stabilized planar growth material of LASS sheets. This material, grown at 200 cm/sup 2//min, is essentially single-crystal.

• Research Organization: Solar Electric Research Division, Solar Energy Research Institute, Golden, Colorado
• OSTI ID: 5050564
• Report Number(s): CONF-840561-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON
ELECTRON CHANNELING
LASS GROWTH METHOD
MICROSTRUCTURE
CRYSTALLOGRAPHY
FABRICATION
POLYCRYSTALS
SHEETS
SILICON SOLAR CELLS
CHANNELING
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CRYSTALS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion