Doping of indium phosphide with group IV elements

Journal Article · Sat Jun 01 00:00:00 EDT 1985 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:6271876

Zakharenkov, L F; Samorukov, B E; Zykov, A M

This paper studies the doping of single crystals of indium phosphide (InP) with group IV elements using data obtained by measuring the total charge concentration of additives and carriers. Single crystals of indium phosphide were grown by the Czochralski method from liquid melts with a liquid hermetic seal in quartz cubicles. The total impurity concentration was determined by atomic-absorption analysis with + or - 10% error. In order to explain the behavior of germanium and tin in indium phosphide, the authors consider the bond energies of additives in indium phosphide and their tetrahedral radii. The authors conclude that the established higher amphoteric character of germanium with respect to tin is probably explained by the moduli of elasticity of the doped crystal.

• Research Organization: M.I. Kalinin Leningrad Polytechnic Institute
• OSTI ID: 6271876
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Vol. 21:1; Other Information: Translated from Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy, Vol. 21, No. 1, pp. 10-13, January, 1985
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
BINDING ENERGY
INDIUM PHOSPHIDES
CRYSTAL DOPING
CZOCHRALSKI METHOD
TIN
CHARGE CARRIERS
CHARGE STATE
DOPED MATERIALS
ELASTICITY
IMPURITIES
MEASURING METHODS
MONOCRYSTALS
CRYSTAL GROWTH METHODS
CRYSTALS
ELEMENTS
ENERGY
INDIUM COMPOUNDS
MATERIALS
MECHANICAL PROPERTIES
METALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
TENSILE PROPERTIES
360602* - Other Materials- Structure & Phase Studies