Anomalous dependence of threshold current on stripe width in gain-guided strained-layer InGaAs/GaAs quantum well lasers

Journal Article · Mon Jun 19 00:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101081· OSTI ID:6184041

Shieh, C; Mantz, J; Lee, H; Ackley, D; Engelmann, R

An anomalous dependence of the threshold current on the stripe width isobserved for gain-guided strained-layer InGaAs/GaAs quantum well lasers. Thethreshold current increases strongly as the stripe width is reduced fromrelatively large values. This is attributed to the huge lateral loss caused byan unusually large index antiguide which manifests itself in the far-fieldbehavior. This large loss also leads to a population of higher quantized energylevels in the InGaAs quantum well strongly reducing the lasing wavelength by asmuch as 61 nm.

• Research Organization: Siemens Corporate Research Inc., 755 College Road East, Princeton, New Jersey 08540(US)
• OSTI ID: 6184041
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 54:25
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
GALLIUM ARSENIDES
OPTICAL PROPERTIES
INDIUM ARSENIDES
SEMICONDUCTOR LASERS
DESIGN
FABRICATION
GAIN
LAYERS
MOLECULAR BEAM EPITAXY
SCHOTTKY BARRIER DIODES
STRAINS
THRESHOLD CURRENT
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
420300* - Engineering- Lasers- (-1989)