Point defect generation during high temperature annealing of the Si-SiO[sub 2] interface

Journal Article · Mon Nov 22 00:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.110275· OSTI ID:5958137

Devine, R A.B.; Mathiot, D ^[1]; Warren, W L; Fleetwood, D M ^[2]; Aspar, B ^[3]

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1. Centre National d'Etudes des Telecommunications, France Telecom, BP 98, 38243 Meylan (France)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
3. LETI/DTA, Centre d'Etudes Nucleaires de Grenoble, BP 85 X, 38041 Grenoble Cedex (France)

Spectroscopic identification of the microscopic defects responsible for annealing induced degradation of the oxide in Si/SiO[sub 2]/Si structures is presented. Hole injection or x irradiation reveals the presence of oxygen-vacancy centers and oxygen-vacancy center/Si interstitial complexes in the oxide following annealing. O related donors in the Si substrate are also present. These defects result from the diffusion of O from the SiO[sub 2] network into the Si; the primary driving force for O diffusion is the difference in the chemical potential of the O in the two phases.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5958137
• Journal Information: Applied Physics Letters; (United States), Vol. 63:21; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON OXIDES
POINT DEFECTS
ANNEALING
DIFFUSION
HETEROJUNCTIONS
INTERSTITIALS
OXYGEN COMPLEXES
SILICON
VACANCIES
CHALCOGENIDES
COMPLEXES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
HEAT TREATMENTS
JUNCTIONS
OXIDES
OXYGEN COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON COMPOUNDS
360606* - Other Materials- Physical Properties- (1992-)