Reliability implications of defects in high temperature annealed Si/SiO{sub 2}/Si structures
- Sandia National Labs., Albuquerque, NM (United States)
- France Telecom/CNET, Meylan (France)
- Chinese Univ. of Hong Kong (Hong Kong)
High-temperature post-oxidation annealing of poly-Si/SiO{sub 2}/Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO{sub 2} interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO{sub 2} network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO{sub 2} and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO{sub 2}/Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10169557
- Report Number(s):
- SAND-94-1726C; CONF-940411-44; ON: DE94015765; TRN: 94:014760
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS),San Francisco, CA (United States),4-8 Apr 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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