SEU response of design- and resistor-hardened D-latches in the SA3300 microprocessor
Conference
·
OSTI ID:5878932
The effectiveness of hardening the SA3300 against SEU using design and design-plus-resistor approaches is presented. The full performance and SEU tolerance requirements are met using R{sub fb} {le} 160 k{Omega}. Lumped-parameter circuit simulations are used to analyze results. 10 refs., 5 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5878932
- Report Number(s):
- SAND-91-0477C; CONF-910751-5; ON: DE91009551
- Resource Relation:
- Conference: IEEE annual international nuclear and space radiation effects conference, San Diego, CA (USA), 15-19 Jul 1991
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MICROPROCESSORS
RADIATION HARDENING
COMPUTERIZED SIMULATION
DESIGN
FEEDBACK
MOS TRANSISTORS
PERFORMANCE
TEMPERATURE DEPENDENCE
COMPUTERS
ELECTRONIC CIRCUITS
HARDENING
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SIMULATION
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
MICROPROCESSORS
RADIATION HARDENING
COMPUTERIZED SIMULATION
DESIGN
FEEDBACK
MOS TRANSISTORS
PERFORMANCE
TEMPERATURE DEPENDENCE
COMPUTERS
ELECTRONIC CIRCUITS
HARDENING
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SIMULATION
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems