Method of making aluminum alloy film by implanting silicon ions followed by thermal diffusion

Patent · Tue Nov 13 00:00:00 EST 1984

OSTI ID:5827004

Heinecke, R A.H.

Aluminum metallization layers on a semiconductor substrate are alloyed with a predetermined quantity of silicon by implanting silicon ions into the metallization layer. The layer is heated during subsequent processing to a temperature of 300/sup 0/ to 500/sup 0/ C. at which simultaneous annealing and diffusion take place to form the alloy. An apparatus for performing the process comprises a vacuum chamber wherein implantation is effected, an ion gun and means including a deflection magnet slit for selecting a single ionic species for implantation.

• Assignee: ITT Industries Inc. (United Kingdom)
• Patent Number(s): US 4482394
• OSTI ID: 5827004
• Resource Relation: Patent Priority Date: Priority date 8 Sep 1982, United Kingdom of Great Britain and Northern Ireland (UK); Other Information: PAT-APPL-415969
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM ALLOYS
ANNEALING
CHEMICAL PREPARATION
ION IMPLANTATION
THERMAL DIFFUSION
INTEGRATED CIRCUITS
FABRICATION
SILICON ALLOYS
DEPOSITION
HEAT TREATMENTS
HIGH TEMPERATURE
MAGNETS
PLASMA GUNS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SUBSTRATES
THIN FILMS
VACUUM SYSTEMS
ALLOYS
DIFFUSION
ELECTRONIC CIRCUITS
FILMS
MICROELECTRONIC CIRCUITS
SYNTHESIS
360101* - Metals & Alloys- Preparation & Fabrication
360600 - Other Materials
420800 - Engineering- Electronic Circuits & Devices- (-1989)