Enhanced diffusion of high-temperature implanted aluminum in silicon carbide
- Cree Research Inc., Durham, NC (United States)
- Russian Academy of Science, St. Petersburg (Russian Federation). Ioffe Physical Technical Inst.
The diffusion of aluminum in silicon carbide during high-temperature Al{sup +} ion implantation was studied using secondary ion mass spectrometry (SIMS). Transmission electron microscopy (TEM) has been used to determine the microstructure of the implanted sample. A 6H-SiC wafer was implanted at a temperature of 1,800 C with 40 keV Al ions to a dose of 2 {times} 10{sup 16} cm{sup {minus}2}. It was established that an Al step-like profile starts at the interface between the crystal region and the damaged layer. The radiation enhanced diffusion coefficient of Al at the interface was determined to be D{sub i} = 2.8 {times} 10{sup {minus}12} cm{sup 2}/s, about two orders of magnitude higher than the thermally activated diffusion coefficient. The Si vacancy-rich near-surface layer formed by this implantation condition is believed to play a significant role in enhanced Al diffusion.
- OSTI ID:
- 477396
- Report Number(s):
- CONF-951155-; ISBN 1-55899-299-5; TRN: 97:009410
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Ion-solid interactions for materials modification and processing; Poker, D.B. [ed.] [Oak Ridge National Lab., TN (United States)]; Ila, D. [ed.] [Alabama A and M Univ., Normal, AL (United States)]; Cheng, Y.T. [ed.] [General Motors Corp., Warren, MI (United States)]; Harriott, L.R. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Sigmon, T.W. [ed.] [Arizona State Univ., Tempe, AZ (United States)]; PB: 923 p.; Materials Research Society symposium proceedings, Volume 396
- Country of Publication:
- United States
- Language:
- English
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