Lateral-mode selectivity in external-cavity diode lasers with residual facet reflectivity

Journal Article · Mon Oct 01 00:00:00 EDT 1990 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/3.60899· OSTI ID:5726836

Sharfin, W F ^[1]; Mooradian, A ^[2]; Harding, C M; Waters, R G ^[3]

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1. GTE Lab., Inc., Waltham, MA (US)
2. Lincoln Lab., Massachusetts Inst. of Technology, Lexington, MA (US)
3. McDonnell Douglas Astronautics Co., Elmsford, NY (US)

The relatively flat lateral gain profile across a wide-stripe laser diode does not allow sufficient overlap with the Gaussian fundamental mode of an external resonator to achieve saturation of the gain in the wings of the mode profile. Thus, parasitic, free-running oscillation of the diode in an external-cavity laser is permitted by residual facet reflectivity of the antireflection-coated diode, and degrades the lateral-mode-selectivity of the external resonator at injection currents exceeding the threshold of the solitary diode. A relation between the maximum injection current at which the external-cavity laser will operate in a single mode and the diode's facet reflectivity is given. Evidence is also presented which indicates that the spectral perturbations of the compound cavity formed by the two facets of the diode and the external mirror may defeat the desired spatial-mode selectivity of the resonator.

• OSTI ID: 5726836
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA), Vol. 26:10; ISSN 0018-9197
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR DIODES
RESONATORS
FEEDBACK
GAIN
GAUSS FUNCTION
LASER CAVITIES
MIRRORS
REFLECTIVITY
THRESHOLD ENERGY
AMPLIFICATION
ELECTRONIC EQUIPMENT
ENERGY
EQUIPMENT
FUNCTIONS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SURFACE PROPERTIES
426002* - Engineering- Lasers & Masers- (1990-)