Bistability in grating-tuned external-cavity semiconductor lasers

Journal Article · Sun Nov 01 00:00:00 EST 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073263· OSTI ID:5612578

Zorabedian, P; Trutna, W R; Cutler, L S

Bistability has been observed in the tuning characteristic and power versus current radiation of a 1.3 ..mu..m grating-tuned external-cavity semiconductor laser. Tuning-direction reversal, current variations, and feedback interruption can change the output power and threshold current at a given wavelength. These effects are shown theoretically to be due to the coupling of the semiconductor gain and index of refraction. From measurements of the semiconductor chip facet reflectivity, solitary laser diode mode spectrum, and tuning curve in the presence of external feedback, the analysis yields values for the external feedback strength, semiconductor modal loss, and linewidth enhancement factor. Using an InGaAsP double-channel-planar-buried-heterostructure laser diode with a 4 percent reflectivity antireflection-coated facet inside an external cavity consisting of a 0.60 numerical aperture lens and a 1200 line/mm diffraction grating, the authors found 22 percent external feedback, 60 cm/sup -1/ model loss, and a linewidth enhancement factor ..cap alpha.. = -7.1.

• Research Organization: Hewlett-Packard Labs., Palo Alto, CA 94304
• OSTI ID: 5612578
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE-23:11
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
STABILITY
FEEDBACK
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LASER CAVITIES
OPERATION
REFRACTIVITY
SEMICONDUCTOR DIODES
TUNING
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)