Monte Carlo particle simulation of radiation-induced heating in GaAs field-effect transistors

Journal Article · Mon Jul 08 00:00:00 EDT 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.105963· OSTI ID:5677439

Moglestue, C ^[1]; Buot, F A; Anderson, W T ^[2]

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1. Fraunhofer Institute of Applied Solid State Physics, D7800 Freiburg, Federal Republic of Germany (DE)
2. Naval Research Laboratory, Washington, DC 20375-5000 (USA)

Exposure of GaAs field-effect transistors to {alpha}-particle radiation has resulted in burnout paths from under the gate to both the source and the drain. Monte Carlo calculations show that the current response from an {alpha}-particle penetrating the center of the gate electrode at normal incidence lasts for 60 ps, about five times longer than predicted by previous hydrodynamic modeling. The thermalization of the induced electrons causes a maximum subsurface heating of the epilayer near the source and the drain when both are held at ground with a negative bias on the gate. A possible melting of the semiconductor will take place at these locations. We present here for the first time a more accurate simulation of the actual lattice heating rates obtained from electron-phonon exchanges inside the device. Although the qualitative results support the previous hydrodynamic analysis, some important quantitative differences are noted.

• OSTI ID: 5677439
• Journal Information: Applied Physics Letters; (United States), Vol. 59:2; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
FIELD EFFECT TRANSISTORS
PHYSICAL RADIATION EFFECTS
ALPHA PARTICLES
GALLIUM ARSENIDES
HEATING
MONTE CARLO METHOD
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
GALLIUM COMPOUNDS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
360605 - Materials- Radiation Effects