Hole transport and doping states in epitaxial CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}
- Motorola, Communications and Advanced Consumer Technologies Group, MOS 12, 1300 North Alma School Road, Chandler, Arizona 85224 (United States)
- The Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801 (United States)
Temperature dependent mobility, resistivity, and carrier concentration measurements were made on epitaxial single crystal thin films of group III-rich CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} (CIGS). The films were produced using a hybrid sputtering and evaporation process on GaAs substrates. Samples with average Ga/(In+Ga) values between 0.03 and 1.0 and Cu/(In+Ga) between 0.73 and 1.00 were measured. All films were p type with room-temperature carrier concentrations between 4{times}10{sup 16} and 2{times}10{sup 19}cm{sup {minus}3}. Fits to electrical measurements were consistent with the presence of two acceptor levels, with activation energies of 167{plus_minus}20 and 42{plus_minus}8meV at low Ga contents, and compensating donors in all samples. Increasing Ga content was found to increase acceptor density and decrease acceptor level depth. Hole mobilities near room temperature were found to be between 167 and 311cm{sup 2}/Vs and peak mobilities were between 439 and 1760cm{sup 2}/Vs. Mobility behavior did not change significantly as a function of composition or the presence of a Ga gradient. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 566982
- Journal Information:
- Journal of Applied Physics, Vol. 83, Issue 3; Other Information: PBD: Feb 1998
- Country of Publication:
- United States
- Language:
- English
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