Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy

Journal Article · Mon Oct 02 00:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.101599· OSTI ID:5522625

Eng, L E; Chen, T R; Sanders, S; Zhuang, Y H; Zhao, B; Yariv, A ^[1]; Morkoc, H ^[2]

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1. Department of Applied Physics, California Institute of Technology, Pasadena, California 91125 (US)
2. The Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801

We report on low threshold current strained InGaAs/AlGaAs single quantum well lasers grown by molecular beam epitaxy. Broad-area threshold current densities of 114 A/cm{sup 2} at 990 nm were measured for 1540-{mu}m-long lasers. Threshold currents of 2.4 mA at 950 nm were obtained for an uncoated buried-heterostructure device with a 2-{mu}m-wide stripe and 425-{mu}m-long cavity. With reflective coatings the best device showed 0.9 mA threshold current ({ital L}=225 {mu}m). Preliminary modulation measurements show bandwidths up to 5.5 GHz limited by the detector response.

• OSTI ID: 5522625
• Journal Information: Applied Physics Letters; (USA), Vol. 55:14; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
CURRENT DENSITY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GHZ RANGE 01-100
HETEROJUNCTIONS
INDIUM ARSENIDES
LASER CAVITIES
MODULATION
MOLECULAR BEAM EPITAXY
REFLECTIVE COATINGS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
CURRENTS
DATA
ELECTRIC CURRENTS
EPITAXY
FREQUENCY RANGE
GALLIUM COMPOUNDS
GHZ RANGE
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
420300* - Engineering- Lasers- (-1989)