Basal-plane stacking faults and polymorphism in AlN, GaN, and InN
- Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)
Energies of basal-plane stacking faults in wurtzite AlN, GaN, and InN are determined using a one-dimensional Ising-type model incorporating effective layer{endash}layer interactions obtained from density-functional-theory calculations. Stacking-fault energies are found to be largest for AlN and smallest for GaN consistent with density-functional results for the wurtzite/zinc-blende energy differences. Estimates are also given for stacking-fault energies in the zinc-blende structure. The values are negative, consistent with observations that nominal zinc-blende films typically contain large numbers of stacking faults. A related result is that hexagonal structures with stacking sequences repeating after four and six bilayers have lower energies than zinc-blende for all three compounds. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 544796
- Journal Information:
- Journal of Applied Physics, Vol. 82, Issue 10; Other Information: PBD: Nov 1997
- Country of Publication:
- United States
- Language:
- English
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