Valence band splittings and band offsets of AlN, GaN, and InN
- National Renewable Energy Laboratory, Golden, Colorado 80401-3393 (United States)
First-principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal-field splitting parameters {Delta}{sub CF} of {minus}217, 42, and 41 meV, respectively, and spin{endash}orbit splitting parameters {Delta}{sub 0} of 19, 13, and 1 meV, respectively. In the zinc blende structure {Delta}{sub CF}{equivalent_to}0 and {Delta}{sub 0} are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 388148
- Journal Information:
- Applied Physics Letters, Vol. 69, Issue 18; Other Information: PBD: Oct 1996
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structural and electronic properties of AlN, GaN and InN, and band offsets at AlN/GaN (10{bar 1}0) and (0001) interfaces
Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on. beta. -SiC