ICP dry etching of III-V nitrides
- Univ. of Florida, Gainesville, FL (United States); and others
Inductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH{sub 4}/H{sub 2}/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH{sub 4} based chemistries. The etch rates increased with increasing dc bias. At low rf power (150 W), the etch rates increased with increasing ICP power, while at 350 W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were {le} 6 for InN over GaN, AlN, InGaN and InAlN under all conditions.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Financial Management and Controller, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States); Office of Naval Research, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 541909
- Report Number(s):
- SAND-97-2168C; CONF-970302-; ON: DE98000168; BR: YN0100000; CNN: Grant N00014-92-J-1895; TRN: AHC29723%%128
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 31 Mar - 4 Apr 1997; Other Information: PBD: [1997]
- Country of Publication:
- United States
- Language:
- English
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