Inductively coupled plasma etching of III-V nitrides in CH{sub 4}/H{sub 2}/Ar and CH{sub 4}/H{sub 2}/N{sub 2} chemistries
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
- Sandia National Labs., Albuquerque, NM (United States)
- PlasmaTherm IP, St. Petersburg, FL (United States)
Inductively coupled plasma (ICP) etching of GaN, AlN, InN, InGaN, and InAlN was investigated in CH{sub 4}/H{sub 2}/Ar and Ch{sub 4}/H{sub 2}/N{sub 2} plasmas as a function of dc bias, ICP power, and pressure. The etch rates were generally quite low, as is common for III-nitrides in CH{sub 4}-based chemistries. In CH{sub 4}/H{sub 2}/Ar plasmas, the etch rates increased with increasing dc bias. At low radio frequency power (150 W), the etch rates increased with increasing ICP power, while at 350 W radio frequency power, a peak was found between 500 and 750 W ICP power. The dc bias was found to increase with increasing pressure. The etch rates in the CH{sub 4}/H{sub 2}/N{sub 2} chemistry were significantly lower, with a peak at 500 W ICP power. The etched surfaces were smooth, while selectivities of etch were {le} 6 for InN over GaN, AlN, InGaN, and InAlN under all conditions.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 536477
- Journal Information:
- Journal of the Electrochemical Society, Vol. 144, Issue 8; Other Information: PBD: Aug 1997
- Country of Publication:
- United States
- Language:
- English
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