Electrical resistivity of copper films by partially ionized beam deposition
- Korea Inst. of Science and Technology, Seoul (Korea, Republic of). Div. of Ceramics
- Yonsei Univ., Seoul (Korea, Republic of). Dept. of Ceramic Engineering
Copper films on Si(100) were prepared by partially ionized beam at 0 kV and 3 kV acceleration voltages in order to investigate effects of ion energy on electrical property with thickness. X-ray diffraction (XRD) pattern analysis was used to investigate crystallinity of the copper films, microstructure by Scanning electron microscope (SEM) and surface roughness by atomic force microscopy (AFM). The crystallinity of the copper films grown at the 3 kV was more (111) textured than that at the 0 kV. The copper films grown at both conditions had nearly same grain size below a thickness of 1,000 {angstrom}. The 1,800 {angstrom} Cu film grown at the 3 kV was 3 times rough than that at the 0 kV. The resistivity of copper films increased due to surface and grain boundary scattering, and the change of resistivity was discussed in terms of surface roughness, grain size and film density assisted by average depositing energy.
- OSTI ID:
- 541127
- Report Number(s):
- CONF-961202-; ISBN 1-55899-343-6; TRN: IM9747%%233
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of Microstructure evolution during irradiation; Robertson, I.M. [ed.] [Univ. of Illinois, Urbana, IL (United States)]; Was, G.S. [ed.] [Univ. of Michigan, Ann Arbor, MI (United States)]; Hobbs, L.W. [ed.] [Massachusetts Inst. of Tech., Cambridge, MA (United States)]; Diaz de la Rubia, T. [ed.] [Lawrence Livermore National Lab., CA (United States)]; PB: 752 p.; Materials Research Society symposium proceedings, Volume 439
- Country of Publication:
- United States
- Language:
- English
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