In-situ low temperature growth and orientation control in MOCVD PZT/RuO{sub 2} thin film heterostructures on SiO{sub 2}/Si substrates.
Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3}/RuO{sub 2} (PZT/RuO{sub 2}) thin film heterostructures with controlled PZT and RuO{sub 2} orientation were successfully grown in-situ on SiO{sub 2}/(001)Si substrates at 525 C, using metal-organic chemical vapor deposition (MOCVD). XRD analysis revealed that the textured orientation of the PZT films is strongly dependent on the orientation of RuO{sub 2} bottom electrode layers. PZT layers grown on (101)-textured RuO{sub 2} exhibit a predominant (001) orientation, while those grown on (110)-textured RuO{sub 2} present a mixed (001)-(111)-(110) polycrystalline structure. Highly (110)-oriented RuO{sub 2} layers were grown using relatively high deposition temperatures and low rates ({approx}350 C and < 3 nm/min, respectively), while (101)-textured RuO{sub 2} layers were grown at slightly lower temperatures and higher deposition rates than those for (110) layers (i.e., {approx}300 C and > 3 nm/min, respectively). The RuO{sub 2} layers exhibited resistivities of 34-40 {micro}{Omega}-cm, average grain size of 65{+-}15 nm, and surface roughness of 3-10 nm (rms), while the PZT layers were dense with average grain size of 150-250 nm. Ag/PZT (001)/RuO{sub 2}(101) capacitors exhibited remanent polarization, saturation polarization, and coercive field of 49.7 {micro}C/cm{sup 2}, 82.5 {micro}C/cm{sup 2}, and 35.0 kv/cm, respectively, while the values for Ag/PZT (001-111-110)/RuO{sub 2} (110) capacitors were 21.5 {micro}C/cm{sup 2}, 35.4 {micro}C/cm{sup 2}, and 39.0 kv/cm, respectively.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- ER
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 938314
- Report Number(s):
- ANL/MSD/JA-29269; TRN: US200908%%281
- Journal Information:
- Integr. Ferroelectrics, Vol. 21, Issue 1998
- Country of Publication:
- United States
- Language:
- ENGLISH
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