Structural and electrical characterization of polycrystalline semiconductor materials

Conference · Mon Jul 01 00:00:00 EDT 1985

OSTI ID:5394785

Matson, R J; Tsuo, Y S

Secondary electron imaging, electron channeling and electron-beam-induced current (EBIC) are used alternately in a scanning electron microscope to characterize and correlate the morphology, crystallographic orientation, and electronic quality (types and spatial distribution of defects) of individual grains in polycrystalline semiconductor samples. The technique is discussed in some detail, and a number of applications and results in the study of edge-supported-pulling (ESP) silicon sheet and low-angle silicon sheet (LASS) materials are reported.

• Research Organization: Solar Energy Research Inst., Golden, CO (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 5394785
• Report Number(s): SERI/TP-213-2689; CONF-850421-13; ON: DE85012166
• Resource Relation: Conference: 2. spring meeting of the Materials Research Society, San Francisco, CA, USA, 15 Apr 1985
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
SCANNING ELECTRON MICROSCOPY
CRYSTALLOGRAPHY
DEFECTS
ELECTRON CHANNELING
LASS GROWTH METHOD
MORPHOLOGY
POLYCRYSTALS
SHEETS
CHANNELING
CRYSTAL GROWTH METHODS
CRYSTALS
ELECTRON MICROSCOPY
MATERIALS
MICROSCOPY
140501* - Solar Energy Conversion- Photovoltaic Conversion
360603 - Materials- Properties