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Title: a -axis oriented YBa sub 2 Cu sub 3 O sub 7 minus x thin films on Si with CeO sub 2 buffer layers

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.106126· OSTI ID:5172776
; ; ; ; ; ;  [1];  [2]
  1. Los Alamos National Laboratory, Los Alamos, New Mexico (USA)
  2. Department of Electronics and Engineering, Iwaki Meisei University, 5-5-1 Iino-Chuodai, Iwaki, Fukushima 970 (Japan)

We have grown {ital a}-axis oriented YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} (YBCO) thin films on Si(100) substrates with (110) oriented insulating buffer layers of cerium dioxide (CeO{sub 2}) using the pulsed laser deposition technique. The films are highly oriented and textured as determined by {theta}--2{theta} x-ray diffraction, x-ray pole-figure scan, scanning electron microscopy, Rutherford backscattering spectroscopy, and ion channeling. No diffusion at the interface has been found at growth temperatures up to 760 {degree}C, indicating the CeO{sub 2} is a chemically stable and structurally compatible intermediate material for the growth of YBCO on Si. A zero resistance superconducting transition temperature of 87 K and a critical-current density ({ital J}{sub {ital c}}) of 1.5{times}10{sup 5} A/cm{sup 2} at 75 K have been measured; {ital J}{sub {ital c}} obtained represents the highest value for the {ital a}-axis oriented YBCO films.

OSTI ID:
5172776
Journal Information:
Applied Physics Letters; (United States), Vol. 59:16; ISSN 0003-6951
Country of Publication:
United States
Language:
English