Formation of single-crystal CoSi{sub 2} buffer layers on Si (100) substrates by high dose Co ion implantation for the deposition of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} thin films
- Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Helmholtzweg 5, D-07743 Jena (Germany)
High quality single-crystal CoSi{sub 2} layers have been successfully formed on Si (100) using low energy high dose Co ion implantation followed by subsequent annealing method as a buffer layer for the deposition of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) thin films. Rutherford backscattering spectrometry with channeling (RBS-C) measurements showed that CoSi{sub 2} layers after annealing at temperature between 850 and 950{degree}C had a minimum yield {chi}{sub min} of about 3{percent}. X-ray diffraction (XRD) spectra revealed that CoSi{sub 2} layers had the same orientation as the Si (100) substrates. Phi scan XRD spectra proved that CoSi{sub 2} layers epitaxially grew in the cube-on-cube epitaxial growth mode with respect to the Si (100) substrates. YBCO films and CeO{sub 2}/YSZ buffer layers were deposited on CoSi{sub 2}/Si (100) substrates via laser ablation and electron beam evaporation, respectively. {theta}{minus}2{theta}, {omega}, and {phi} scan XRD spectra illustrated that YBCO films and CeO{sub 2}/YSZ buffer layers had the epitaxial structure both in a{endash}b plane and along c-axis. YBCO films grown on this multilayered structure demonstrated excellent superconducting properties with the zero resistance transition temperature T{sub c0} of 87{endash}90 K. The transition width ({Delta}T{sub c}) was about 1 K. Orientation and epitaxial crystalline quality of YBCO films and CeO{sub 2}/YSZ buffer layers were confirmed by XRD and RBS-C characterization. All films consisted of c-axis oriented grains. RBS-C spectra indicated a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 8{percent}, and interdiffusion between the YBCO film and buffer layers or between the YBCO film and the substrate was limited. This multilayer system shows the possibliity for the application of these films on technical Si substrates in the field of hybrid superconductor-semiconductor technology. {copyright} {ital 1997 Materials Research Society.}
- OSTI ID:
- 550420
- Journal Information:
- Journal of Materials Research, Vol. 12, Issue 8; Other Information: PBD: Aug 1997
- Country of Publication:
- United States
- Language:
- English
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