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Title: Photoelectronic properties of zinc phosphide crystals, films and heterojunctions. Quarterly progress report No. 5, April 1-June 30, 1980

Technical Report ·
OSTI ID:5042174

Growth of Zn/sub 3/P/sub 2/ crystals using a chemical transport method with iodine as the transport agent produced a successful growth run with greatly enhanced growth rate. Surprisingly, the electrical properties of the crystal appear to be unaffected by the iodine transport agent. This method is being explored as an alternative to thermal diffusion for doping of Zn/sub 3/P/sub 2/. Hall effect measurements have been made on several Zn/sub 3/P/sub 2/ crystals as a function of temperature. Measured hole mobilities were between 10 and 20 cm/sup 2//V-sec. The mobility varies with temperature in the expected way for lattice scattering at higher temperatures and charged imperfection scattering at lower temperatures. n-CdO/p-Zn/sub 3/P/sub 2/ junctions were prepared by rf sputtering of CdO on Zn/sub 3/P/sub 2/ crystal substrates, both with and without previous etching of the surface. Poor dark diode and almost absent light response were measured. Thin films of Zn/sub 3/P/sub 2/ grown by close-spaced vapor transport have a higher growth rate in H/sub 2/ than in Ar. Thermoelectric power measurements are being prepared to analyze the transport properties in these films.

Research Organization:
Stanford Univ., CA (USA). Dept. of Materials Science and Engineering
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5042174
Report Number(s):
SERI/PR-8031-1-T1
Country of Publication:
United States
Language:
English