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Title: Photoelectronic properties of zinc phosphide crystals, films and heterojunctions. Quarterly progress report No. 7, October 1-December 31, 1980

Technical Report ·
DOI:https://doi.org/10.2172/6510647· OSTI ID:6510647

Further measurements of conductivity and Hall effect were carried out on samples of polycrystalline Zn/sub 3/P/sub 2/ with grain size of a few mm. Results agree with the fairly general trend observed for sublimation-grown and iodine-transport grown single crystals, in which the magnitude of the resistivity and of the conductivity activation energy increase with position of the sample from early in the growth to late in the growth. All conductivity activation energies observed to date on ten samples of single crystal and polycrystalline Zn/sub 3/P/sub 2/ are summarized. Initial Hall measurements on a Ag-doped sample indicate 300/sup 0/K mobility of 12 cm/sup 2//V-sec and p = 4 x 10/sup 17/ cm/sup 3/. Higher resistivity Zn/sub 3/P/sub 2/ samples have been produced by vacuum annealing sublimation-grown crystals. The temperature dependence of conductivity for one of the most conducting of the thin-film Zn/sub 3/P/sub 2/ samples deposited by close-spaced vapor transport, was measured together with the thermoelectric power in the high temperature range (320/sup 0/ to 390/sup 0/K). Combination of the measurements indicates a temperature-independent p = 10/sup 15/ cm/sup -3/ and a strongly temperature dependent mobility with a value of 0.1 cm/sup 2//V-sec at 330/sup 0/K and an activation energy of 0.57 eV.

Research Organization:
Solar Energy Research Inst. (SERI), Golden, CO (United States); Stanford Univ., CA (USA). Dept. of Materials Science and Engineering
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6510647
Report Number(s):
SERI/PR-8031-1-T3
Country of Publication:
United States
Language:
English