Electrical properties and microstructures of Pt/Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3}/SrRuO{sub 3} capacitors
- Materials and Devices Research Laboratories, RD Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210 (Japan)
- Environmental Engineering Laboratories, RD Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210 (Japan)
Thin film polycrystalline Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} capacitors employing conductive perovskite oxide SrRuO{sub 3} as a bottom electrode were fabricated on Si substrates by rf-magnetron sputtering. Dielectric constants of these capacitors were observed to be 206, 214, and 146 for 60, 40, and 20 nm Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BSTO) thicknesses, respectively. The lowest SiO{sub 2} equivalent thickness of 0.54 nm was obtained for 20-nm-thick BSTO capacitors; their leakage current density was less than 1{times}10{sup {minus}7} A/cm{sup 2} for {plus_minus}1.8 V bias. The cross-sectional transmission electron microscope observation revealed that BSTO and SrRuO{sub 3} (SRO) formed continuous columnar grains and showed epitaxial growth at the interface of BSTO/SRO within each column; this microstructure of the capacitors was tentatively designated {open_quotes}local epitaxial film.{close_quotes} {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 495256
- Journal Information:
- Applied Physics Letters, Vol. 70, Issue 11; Other Information: PBD: Mar 1997
- Country of Publication:
- United States
- Language:
- English
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