Structural and electrical properties of Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films with conductive SrRuO{sub 3} bottom electrodes

Journal Article · Mon Apr 24 00:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.113945· OSTI ID:45950

Jia, Q X; Wu, X D; Foltyn, S R; Tiwari, P ^[1]

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1. Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

Epitaxial Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films were deposited on LaAlO{sub 3} substrates with the conductive metallic oxide SrRuO{sub 3} (SRO) as a bottom electrode by pulsed laser deposition. The BST and SRO films were (h00) and (00l) oriented normal to the substrate surface, respectively. The epitaxial nature of both BST and SRO layers was determined by the measurement of in-plane orientation with respect to the major axes of the substrate. Ion beam channeling with a minimum yield of around 10% from Rutherford backscattering spectrometry demonstrated the films to be of high crystallinity. A dielectric constant around 500 and dielectric loss less than 0.01 at a frequency of 10 kHz were measured on the capacitors with a configuration of Ag/BST/SRO. Electrical measurements on such epitaxial BST films showed a breakdown voltage above 10{sup 6} V/cm and a leakage current density of less than 5{times}10{sup {minus}8} A/cm at a field intensity of 2{times}10{sup 5} V/cm. These results prove the BST/SRO heterostructure to be a good combination for microelectronic device applications.

• OSTI ID: 45950
• Journal Information: Applied Physics Letters, Vol. 66, Issue 17; Other Information: PBD: 24 Apr 1995
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM COMPOUNDS
EPITAXY
STRONTIUM COMPOUNDS
TITANATES
THIN FILMS
MIM JUNCTIONS
DIELECTRIC PROPERTIES
DIELECTRIC MATERIALS
MORPHOLOGY
ION CHANNELING
BREAKDOWN