Photo-chemical etching on silicon-carbide by using KrF excimer laser and Xe{sub 2}* excimer lamp
- Tokai Univ., Hiratsuka, Kanagawa (Japan)
Silicon-carbide (SiC) has excellent refractivity in the range of soft X-ray and is well-used as a diffraction grating for Synchrotron-radiation (SR) light. This material has a high melting point, hardness and chemical stability. Therefore, etching of the material by chemical or physical methods is very difficult. The authors reported a photo-chemical etching method in which a SiC surface is placed in NF{sub 3} laser light of 248 nm perpendicularly on the sample surface. The Xe{sub 2}* excimer lamp light are employed for NF{sub 3} gas decomposition, and KrF laser light used for excitation on the sample surface. This photochemical etching reaction are detected by XPS, QMS and FTIR measurements. This method achieved 0.18 {angstrom}/shot in etching efficiency, and became maximum approximately 7 times as high as ArF laser light for photodecomposition.
- OSTI ID:
- 490887
- Report Number(s):
- CONF-951155-; ISBN 1-55899-300-2; TRN: IM9729%%138
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Advanced laser processing of materials -- Fundamentals and applications; Singh, R. [ed.] [Univ. of Florida, Gainesville, FL (United States)]; Norton, D. [ed.] [Oak Ridge National Lab., TN (United States)]; Laude, L. [ed.] [Univ. of Mons-Hainaut, Mons (Belgium)]; Narayan, J. [ed.] [North Carolina State Univ., Raleigh, NC (United States)]; Cheung, J. [ed.] [Rockwell International Science Center, Thousand Oaks, CA (United States)]; PB: 693 p.; Materials Research Society symposium proceedings, Volume 397
- Country of Publication:
- United States
- Language:
- English
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