CW performance of an InGaAs-GaAs-AlGaAs laterally-coupled distributed feedback (LC-DFB) ridge laser diode
- Univ. of Delaware, Newark, DE (United States). Dept. of Electrical Engineering
- California Inst. of Technology, Pasadena, CA (United States)
- Cornell Univ., Ithaca, NY (United States). National Nanofabrication Facility
Single-mode distributed feedback (DFB) laser diodes typically require a two-step epitaxial growth or use of a corrugated substrate. The authors demonstrate InGaAs-GaAs-AlGaAs DFB lasers fabricated from a single epitaxial growth using lateral evanescent coupling of the optical field to a surface grating etched along the sides of the ridge. A CW threshold current of 25 mA and external quantum efficiency of 0.48 mW/mA per facet were measured for a 1 mm cavity length device with anti-reflection coated facets. Single-mode output powers as high as 11 mW per facet at 935 nm wavelength were attained. A coupling coefficient of at least 5.8 cm{sup {minus}1} was calculated from the subthreshold spectrum taking into account the 2% residual facet reflectivity.
- OSTI ID:
- 46116
- Journal Information:
- IEEE Photonics Technology Letters, Vol. 7, Issue 3; Other Information: PBD: Mar 1995
- Country of Publication:
- United States
- Language:
- English
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