All-perovskite-oxide ferroelectric memory transistor composed of Bi{sub 2}Sr{sub 2}CuO{sub x} and PbZr{sub 0.5}Ti{sub 0.5}O{sub 3} films
An all-perovskite-oxide transistor composed of a tetragonal perovskite PbZr{sub 0.5}Ti{sub 0.5}O{sub 3} (ferroelectric) and a layered perovskite Bi{sub 2}Sr{sub 2}CuO{sub 6} (conducting channel) is fabricated on a cubic perovskite Nb-doped SrTiO{sub 3} (gate electrode). We demonstrate a considerably large conductance modulation of Bi{sub 2}Sr{sub 2}CuO{sub 6} by varying the direction and magnitude of the polarization. The ratio of the ON- and OFF-state drain currents reaches 196. A memory retention time as long as about 8 h is also observed. The drain current versus the drain voltage curves analyzed by adopting a semiconductor model give fairly good agreement with the measurement data. We also discuss the advantages and future prospects of all-perovskite-oxide transistors. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204241
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 12; Other Information: DOI: 10.1063/1.1370999; Othernumber: JAPIAU000089000012008153000001; 040112JAP; PBD: 15 Jun 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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