Upward ferroelectric self-poling in (001) oriented PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} epitaxial films with compressive strain
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China)
- Department of Materials Sciences and Engineering, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
Upward self-poling phenomenon was observed in PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} ferroelectric films which were grown on (001) SrTiO{sub 3} substrate with either p-type La{sub 0.7}Sr{sub 0.3}MnO{sub 3} or n-type SrRuO{sub 3} buffered layer, or on n-type (001) Nb-SrTiO{sub 3} substrate. Both upward self-poling and epitaxial strain are strong in the super-thin PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} epitaxial films, while they become weak and finally disappear in thick epitaxial films or thin epitaxial films with high-density oxygen vacancies. Besides, both of them disappear in PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} polycrystalline films on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate. Therefore, the main origin of upward self-poling is epitaxial strain rather than p-n/Schottky junction or charged vacancies in PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} epitaxial films here.
- OSTI ID:
- 22251771
- Journal Information:
- AIP Advances, Vol. 3, Issue 12; Other Information: (c) 2013 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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