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Title: Amorphous semiconductor sample preparation for transmission EXAFS measurements

Book ·
OSTI ID:302416
; ;  [1]
  1. Australian National Univ., Canberra (Australia). Dept. of Electronic Materials Engineering; and others

A novel methodology has been developed for the preparation of amorphous semiconductor samples for use in transmission extended x-ray absorption fine structure (EXAFS) measurements. Epitaxial heterostructures were fabricated by metal organic chemical vapor deposition (group III-Vs) or molecular beam epitaxy (group IVs). An epitaxial layer of {approximately} 2 {micro}m thickness was separated from the underlying substrate by selective chemical etching of an intermediate sacrificial layer. Ion implantation was utilized to amorphize the epitaxial layer either before or after selective chemical etching. The resulting samples were both stoichiometric and homogeneous in contrast to those produced by conventional techniques. The fabrication of amorphous GaAs, InP, In{sub 0.53}Ga{sub 0.47}As and Si{sub x}Ge{sub 1{minus}x} samples is described. Furthermore, EXAFS measurements comparing both fluorescence and transmission detection, and crystalline and amorphized GaAs, are shown.

Sponsoring Organization:
USDOE, Washington, DC (United States)
OSTI ID:
302416
Report Number(s):
CONF-980405-; TRN: 99:002645
Resource Relation:
Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 13-17 Apr 1998; Other Information: PBD: 1998; Related Information: Is Part Of Applications of synchrotron radiation techniques to materials science 4; Mini, S.M. [ed.] [Northern Illinois Univ., DeKalb, IL (United States)]|[Argonne National Lab., IL (United States)]; Stock, S.R. [ed.] [Georgia Inst. of Tech., Atlanta, GA (United States)]; Perry, D.L. [ed.] [Lawrence Berkeley National Lab., CA (United States)]; Terminello, L.J. [ed.] [Lawrence Livermore National Lab., CA (United States)]; PB: 398 p.; Materials Research Society symposium proceedings, Volume 524
Country of Publication:
United States
Language:
English