EXAFS characterization of amorphous GaAs
- Australia National Univ., Canberra (Australia)
- Australian Nuclear Science and Technology Organization, Menai (Australia)
- Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.
The structural parameters of stoichiometric, amorphous GaAs have been determined with extended x-ray absorption fine structure (EXAFS) measurements performed in transmission mode at 10 K. Amorphous GaAs samples were fabricated with a combination of epitaxial growth, ion implantation and selective chemical etching. Relative to a crystalline sample, the nearest-neighbor bond length and Debye-Waller factor both increased for amorphous material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to {approximately} 3.85 atoms from the crystalline value of four. All structural parameters were independent of implantation conditions and as a consequence, were considered representative of intrinsic, amorphous GaAs as opposed to an implantation-induced extrinsic structure.
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- OSTI ID:
- 302415
- Report Number(s):
- CONF-980405-; TRN: 99:002644
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 13-17 Apr 1998; Other Information: PBD: 1998; Related Information: Is Part Of Applications of synchrotron radiation techniques to materials science 4; Mini, S.M. [ed.] [Northern Illinois Univ., DeKalb, IL (United States)]|[Argonne National Lab., IL (United States)]; Stock, S.R. [ed.] [Georgia Inst. of Tech., Atlanta, GA (United States)]; Perry, D.L. [ed.] [Lawrence Berkeley National Lab., CA (United States)]; Terminello, L.J. [ed.] [Lawrence Livermore National Lab., CA (United States)]; PB: 398 p.; Materials Research Society symposium proceedings, Volume 524
- Country of Publication:
- United States
- Language:
- English
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