Polarized angular distributions of parametric x radiation and vacuum-ultraviolet transition radiation from relativistic electrons

Journal Article · Sat Apr 01 00:00:00 EST 1995 · Physical Review. E, Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics

DOI:https://doi.org/10.1103/PhysRevE.51.R2759· OSTI ID:29280

Fiorito, R B; Rule, D W ^[1]; Piestrup, M A ^[2]; Maruyama, X K ^[3]; Silzer, R M; Skopik, D M ^[4]; Shchagin, A V ^[5]

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1. Naval Surface Warfare Center, Carderock Division, 10901 New Hampshire Avenue, Silver Spring, Maryland 20903-5640 (United States)
2. Adelphi Technology Inc., 2181 Park Boulevard, Palo Alto, California 94301 (United States)
3. Naval Postgraduate School, Monterey, California 93943 (United States)
4. Saskatchewan Accelerator Laboratory, Saskatoon, Saskatchewan, Canada S7NOWO (Canada)
5. Kharkov Institute of Physical Science and Technology, 310108 (Ukraine)

We present quantifiable images of the angular distributions (AD`s) of parametric x radiation (PXR), and vacuum-ultraviolet transition radiation (vuv TR) from 230 MeV electrons interacting with a silicon crystal. Both AD`s are highly polarized. The vuv TR and optical TR data provide measurements of the beam energy and effective divergence angle. Using these quantities and separately known values of the electronic susceptibility {vert_bar}{chi}{sub 0}{vert_bar}, we show that the measured PXR AD is in good agreement with the predictions of single crystal theory. Our analysis suggests a method to measure {vert_bar}{chi}{sub 0}{vert_bar} using PXR AD`s.

• DOE Contract Number: FG03-91ER81099
• OSTI ID: 29280
• Journal Information: Physical Review. E, Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics, Vol. 51, Issue 4; Other Information: PBD: Apr 1995
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ELECTRON COLLISIONS
X-RAY EMISSION ANALYSIS
MEV RANGE 100-1000
SILICON
CRYSTALS
POLARIZATION
ANGULAR DISTRIBUTION
ULTRAVIOLET RADIATION
IMAGES