Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg{sub 1–x}Cd{sub x}Te Layers

Journal Article · Thu Nov 15 00:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618110131· OSTI ID:22749736

Rumyantsev, V. V.; Morozov, S. V.; Kadykov, A. M.; Fadeev, M. A. ^[1]; Hübers, H. -W. ^[2]; Gavrilenko, V. I. ^[1]

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1. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
2. Institut für Physik, Humboldt-Universität zu Berlin (Germany)

A method for calculating the states of multivalent donors and acceptors in Hg{sub 1–x}Cd{sub x}Te materials is developed. The ionization energies of deep acceptor and donor centers in epitaxial Hg{sub 1–x}Cd{sub x}Te films are calculated. The calculation method takes into account the influence of both the valence band and the conduction band on the states of impurity-defect centers. The calculations of energies for the levels of tetravalent acceptors and donors associated with crystalline structure defects indicate the intercenter nature of lines observed previously in the photoluminescence spectra of Hg{sub 1–x}Cd{sub x}Te films.

• OSTI ID: 22749736
• Journal Information: Semiconductors, Vol. 52, Issue 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CALCULATION METHODS
DEFECTS
EPITAXY
FILMS
IMPURITIES
IONIZATION
MATERIALS
PHOTOLUMINESCENCE
SPECTRA
VALENCE