Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg{sub 1– x}Cd{sub x}Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method
- Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
- Russian Academy of Sciences, Devyatykh Institute of Chemistry of High-Purity Substances (Russian Federation)
The temperature dependences of the charge-carrier concentration and lifetime of minority carriers in undoped and arsenic-doped p-type Hg{sub 1– x}Cd{sub x}Te epitaxial layers with x ≈ 0.4 grown by the MOCVD-IMP (metalorganic chemical vapor deposition–interdiffusion multilayer process) method are studied. It is shown that the temperature dependences of the charge-carrier concentration can be described by a model assuming the presence of one acceptor and one donor level. The ionization energies of acceptors in the undoped and arsenic-doped materials are 14 and 3.6 meV, respectively. It is established that the dominant recombination mechanism in the undoped layers is Shockley–Read–Hall recombination, and after low-temperature equilibrium annealing in mercury vapors (230°C, 24 h), the dominant mechanism is radiative recombination. The fundamental limitation of the lifetime in the arsenic-doped material is caused by the Auger-7 process. Activation annealing (360°C, 2 h) of the doped layers makes it possible to attain the 100% activation of arsenic.
- OSTI ID:
- 22749933
- Journal Information:
- Semiconductors, Vol. 52, Issue 6; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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