Enhanced monolayer MoS{sub 2}/InP heterostructure solar cells by graphene quantum dots

Journal Article · Mon Apr 18 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4946856· OSTI ID:22591620

Wang, Peng ^[1]; Lin, Shisheng; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang ^[1]; Ding, Guqiao ^[2]

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1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China)
2. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS{sub 2})/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS{sub 2}, which results in n-type doping of MoS{sub 2}. The doping effect increases the barrier height at the MoS{sub 2}/InP heterojunction, thus the averaged power conversion efficiency of MoS{sub 2}/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS{sub 2} based heterostructure solar cells.

• OSTI ID: 22591620
• Journal Information: Applied Physics Letters, Vol. 108, Issue 16; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
14 SOLAR ENERGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CONVERSION
EFFECTIVE CHARGE
EFFICIENCY
GRAPHENE
HETEROJUNCTIONS
INDIUM PHOSPHIDES
MOLYBDENUM
MOLYBDENUM SULFIDES
PHOTOLUMINESCENCE
PHOTOVOLTAIC EFFECT
QUANTUM DOTS
SILICON OXIDES
SOLAR CELLS
VAN DER WAALS FORCES