High temperature coefficient of resistance of low-temperature-grown VO{sub 2} films on TiO{sub 2}-buffered SiO{sub 2}/Si (100) substrates

Journal Article · Fri Aug 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4927746· OSTI ID:22494706

Miyazaki, Kenichi; Suzuki, Megumi; Wado, Hiroyuki ^[1]; Shibuya, Keisuke; Sawa, Akihito ^[2]

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1. DENSO Corporation, Aichi 470-0111 (Japan)
2. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562 (Japan)

The introduction of a TiO{sub 2} buffer layer significantly improved the temperature coefficient of resistance (TCR), a measure of the sharpness of the metal–insulator transition, for films of VO{sub 2} grown on SiO{sub 2}/Si (100) substrates at growth temperatures below 670 K. X-ray diffraction and Raman scattering measurements revealed that polycrystalline VO{sub 2} films were formed on the TiO{sub 2}-buffered substrates at low temperatures below 600 K, whereas amorphous films were formed at these temperatures on SiO{sub 2}/Si (100) substrates without a TiO{sub 2} buffer layer. Electron microscopy studies confirmed that the TiO{sub 2} buffer layer enhanced the grain growth of VO{sub 2} films at low growth temperatures. The VO{sub 2} films grown at 600 K on TiO{sub 2}-buffered substrates showed a large TCR of more than 80%/K as a result of the improved crystallinity and grain size of the VO{sub 2} films. Our results provide an effective approach toward the integration of VO{sub 2}-based devices onto Si platforms at process temperatures below 670 K.

• OSTI ID: 22494706
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRON MICROSCOPY
GRAIN GROWTH
GRAIN SIZE
POLYCRYSTALS
RAMAN EFFECT
SILICON
SILICON OXIDES
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TITANIUM OXIDES
VANADIUM OXIDES
X-RAY DIFFRACTION