Synthesis and electrical behavior of VO2 thin films grown on SrRuO3 electrode layers

Zhang, Chengyang; Bisht, Ravindra Singh; Nozariasbmarz, Amin; Saha, Arnob; Han, Chan Su; Wang, Qi; Yuan, Yifan; Sengupta, Abhronil; Priya, Shashank; Ramanathan, Shriram

doi:10.1116/6.0001798

Title: Synthesis and electrical behavior of VO₂ thin films grown on SrRuO₃ electrode layers

Journal Article · Fri Jun 17 00:00:00 EDT 2022 · Journal of Vacuum Science and Technology A

DOI:https://doi.org/10.1116/6.0001798· OSTI ID:1961586

Zhang, Chengyang ^[1]; Bisht, Ravindra Singh ^[1]; Nozariasbmarz, Amin ^[2]; Saha, Arnob ^[2]; Han, Chan Su ^[2]; Wang, Qi ^[1];

^[1]; Sengupta, Abhronil ^[2]; Priya, Shashank ^[2]; Ramanathan, Shriram ^[1]

Purdue Univ., West Lafayette, IN (United States)
Pennsylvania State Univ., University Park, PA (United States)

VO₂ thin films were grown on conducting oxide underlayer SrRuO₃ buffered SrTiO₃ (111) and Si/SiO₂ substrates, respectively, using sputtering. X-ray diffraction phi-scans revealed the epitaxial nature of the VO₂ films grown on SrRuO₃ buffered SrTiO₃ and polycrystalline structure for films grown on SrRuO₃ buffered Si/SiO₂. X-ray photoelectron spectroscopy confirms a dominant presence of V⁴⁺ in both films and establishes a high-quality growth of single-phase VO₂ films. Temperature and electric-field driven metal-insulator-transition in both the in-plane and out-of-plane configurations were investigated. Depending on the configuration, the resistance change across the metal-insulator-transition varies from a factor of 1.57–3. The measured resistance in each state as well as the magnitude of resistance change were similar during temperature and electric-field driven metal-insulator-transition. To shed light on the suppressed metal-insulator-transition characteristics due to the current shunting effect from conducting SrRuO₃ bottom electrode, a distributed resistance network model is proposed and benchmarked against reports from the literature. Here, the results demonstrate the growth of high-quality VO₂ on conducting SrRuO₃ layers and their electrical behavior, which is of particular interest for all-oxide electronic devices utilizing phase transitions such as resistive memory and neuromorphic oscillators.

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Research Organization:: Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0021118

OSTI ID:: 1961586

Alternate ID(s):: OSTI ID: 1873032

Journal Information:: Journal of Vacuum Science and Technology A, Vol. 40, Issue 4; ISSN 0734-2101

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

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