Tunable zinc interstitial related defects in ZnMgO and ZnCdO films

Journal Article · Tue Apr 14 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4917207· OSTI ID:22402848

Li, Wanjun; Qin, Guoping ^[1]; Fang, Liang; Ye, Lijuan; Wu, Fang ^[1]; Ruan, Haibo ^[2]; Zhang, Hong; Kong, Chunyang; Zhang, Ping ^[3]

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1. State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing 401331 (China)
2. Research Center for Materials Interdisciplinary Sciences, Chongqing University of Arts and Sciences, Chongqing 402160 (China)
3. Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, Chongqing 401331 (China)

We report tunable band gap of ZnO thin films grown on quartz substrates by radio frequency magnetron sputtering. The zinc interstitial (Zn{sub i}) defects in ZnO films were investigated by X-ray diffraction, Raman scattering, Auger spectra, first-principle calculations, and Hall measurement. Undoped ZnO film exhibits an anomalous Raman mode at 275 cm{sup −1}. We first report that 275 cm{sup −1} mode also can be observed in ZnO films alloyed with Mg and Cd, whose Raman intensities, interestingly, decrease and increase with increasing Mg and Cd alloying content, respectively. Combined with the previous investigations, it is deduced that 275 cm{sup −1} mode is attributed to Zn{sub i} related defects, which is demonstrated by our further experiment and theoretical calculation. Consequently, the concentration of Zn{sub i} related defects in ZnO can be tuned by alloying Mg and Cd impurity, which gives rise to different conductivity in ZnO films. These investigations help to further understand the controversial origin of the additional Raman mode at 275 cm{sup −1} and also the natural n-type conductivity in ZnO.

• OSTI ID: 22402848
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AUGER ELECTRON SPECTROSCOPY
CADMIUM OXIDES
CONCENTRATION RATIO
ELECTRIC CONDUCTIVITY
ENERGY GAP
HALL EFFECT
INTERSTITIALS
MAGNESIUM OXIDES
MAGNETRONS
QUARTZ
RADIOWAVE RADIATION
RAMAN EFFECT
RAMAN SPECTRA
SPUTTERING
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
ZINC
ZINC OXIDES