Current-induced electrical self-oscillations across out-of-plane threshold switches based on VO{sub 2} layers integrated in crossbars geometry
- SPCTS UMR 7513, CNRS/University of Limoges, 12 rue Atlantis, 87068 Limoges (France)
Electrically activated metal-insulator transition (MIT) in vanadium dioxide (VO{sub 2}) is widely studied from both fundamental and practical points of view. It can give valuable insights on the currently controversial phase transition mechanism in this material and, at the same time, allows the development of original MIT-based electronic devices. Electrically triggered insulator-metal transitions are demonstrated in novel out-of-plane, metal-oxide-metal type devices integrating a VO{sub 2} thin film, upon applying moderate threshold voltages. It is shown that the current-voltage characteristics of such devices present clear negative differential resistance effects supporting the onset of continuous, current-driven phase oscillations across the vanadium dioxide material. The frequencies of these self-sustained oscillations are ranging from 90 to 300 kHz and they may be tuned by adjusting the injected current. A phenomenological model of the device and its command circuit is developed, and allows to extract the analytical expressions of the oscillation frequencies and to simulate the electrical oscillatory phenomena developed across the VO{sub 2} material. Such out-of-plane devices may further contribute to the general understanding of the driving mechanism in metal-insulator transition materials and devices, a prerequisite to promising applications in high speed/high frequency networks of oscillatory or resistive memories circuits.
- OSTI ID:
- 22273585
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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