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Title: Microstructural and crystallographic imperfections of MgB{sub 2} superconducting wire and their correlation with the critical current density

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4862670· OSTI ID:22251671
;  [1];  [2];  [3];  [4]; ;  [5];  [6]
  1. Department of Physics and Astronomy, College of Science, P. O. Box 2455, King Saud University, Riyadh 11451 (Saudi Arabia)
  2. Materials Research Team, National Fusion Research Institute, Yueeong, Daejeon 305-333 (Korea, Republic of)
  3. Busan Center, Korea Basic Science Institute, Geumjeong, Busan 609-735 (Korea, Republic of)
  4. Department of Physics, College of Science and Technology, Nihon University, 1-8 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan)
  5. Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasugakoen, Kasuga, Fukuoka 816-8580 (Japan)
  6. Institute for Superconducting and Electronic Materials, University of Wollongong, North Wollongong, New South Wales 2500 (Australia)

A comprehensive study of the effects of structural imperfections in MgB{sub 2} superconducting wire has been conducted. As the sintering temperature becomes lower, the structural imperfections of the MgB{sub 2} material are increased, as reflected by detailed X-ray refinement and the normal state resistivity. The crystalline imperfections, caused by lattice disorder, directly affect the impurity scattering between the π and σ bands of MgB{sub 2}, resulting in a larger upper critical field. In addition, low sintering temperature keeps the grain size small, which leads to a strong enhancement of pinning, and thereby, enhanced critical current density. Owing to both the impurity scattering and the grain boundary pinning, the critical current density, irreversibility field, and upper critical field are enhanced. Residual voids or porosities obviously remain in the MgB{sub 2}, however, even at low sintering temperature, and thus block current transport paths.

OSTI ID:
22251671
Journal Information:
AIP Advances, Vol. 4, Issue 1; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
Country of Publication:
United States
Language:
English

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