Formation of High-Field Pinning Centers in Superconducting MgB{sub 2} Wires by Using High Hot Isostatic Pressure Process
- Polish Academy of Sciences, Institute of High Pressure Physics (Poland)
- Polish Academy of Sciences, Institute of Low Temperature and Structure Research (Poland)
- Abant Izzet Baysal University, Department of Physics (Turkey)
This paper demonstrates the effects of hot isostatic pressure (HIP) on the structure and transport critical parameters of in situ MgB{sub 2} wires without a barrier. Our results show that only HIP and nano-boron allow the formation of more high-field pinning centers, which lead to the increase in critical current density (J{sub c}) at high applied magnetic fields. Nano-boron and annealing at a low pressure increase the J{sub c} in the low magnetic field. This indicates that nano-particles create more high-field pinning centers. In addition, the results show that nano-boron improves the connection between the grains. Scanning electron microscope results show that HIP increases the reaction rate between Mg and B, density, and homogeneity of the MgB{sub 2} material. Additionally, HIP allows to create a structure with small grains and voids and eliminates the significance of the number of voids. High isostatic pressure allows to obtain high J{sub c} of 10 A/mm{sup 2} (at 4.2 K) in 10 T and increases irreversible magnetic field (B{sub irr}) and upper critical field (B{sub c2}). Measurements show that these wires have high critical temperature of 37 K.
- OSTI ID:
- 22771738
- Journal Information:
- Journal of Superconductivity and Novel Magnetism, Vol. 30, Issue 12; Other Information: Copyright (c) 2017 Springer Science+Business Media, LLC, part of Springer Nature; Article Copyright (c) 2017 The Author(s); http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1557-1939
- Country of Publication:
- United States
- Language:
- English
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