InAs{sub 0.45}P{sub 0.55}/InP strained multiple quantum wells intermixed by inductively coupled plasma etching

Journal Article · Tue Dec 15 00:00:00 EST 2009 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2009.08.006· OSTI ID:22202519

Cao, Meng ^[1]; Wu, Hui-Zhen; Lao, Yan-Feng; Cao, Chun-Fang; Liu, Cheng ^[1]

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1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

The intermixing effect on InAs{sub 0.45}P{sub 0.55}/InP strained multiple quantum wells (SMQWs) by inductively coupled plasma (ICP) etching and rapid thermal annealing (RTA) is investigated. Experiments show that the process of ICP etching followed RTA induces the blue shift of low temperature photoluminescence (PL) peaks of QWs. With increasing etching depth, the PL intensities are firstly enhanced and then diminished. This phenomenon is attributed to the variation of surface roughness and microstructure transformation inside the QW structure during ICP processing.

• OSTI ID: 22202519
• Journal Information: Materials Research Bulletin, Vol. 44, Issue 12; Other Information: Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
ETCHING
INDIUM ARSENIDES
INDIUM PHOSPHIDES
MICROSTRUCTURE
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM WELLS
X-RAY DIFFRACTION