1. 3 [mu]m InAs[sub y]P[sub 1[minus]y]--InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition

Journal Article · Tue Jun 01 00:00:00 EDT 1993 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.234387· OSTI ID:5708496

Kasukawa, Akihiko; Namegaya, Takeshi; Fukushima, Toru; Iwai, Norihiro; Kikuta, Toshio ^[1]

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1. Yokohama R and D Labs., Yokohama (Japan)

The authors report on the growth of InAs[sub y]P[sub 1[minus]y]-InP strained-layer quantum wells using metalorganic chemical vapor deposition (MOCVD) and the low threshold operation of novel 1.3 [mu]m InAs[sub y]P[sub 1[minus]y]-InP strained-layer quantum-well laser diodes (SL-QW LD's) with separate-confinement heterostructure (SCH). Growth temperature has been investigated in terms of the crystal quality of a grown layer using full width at half maximum (FWHM) of low temperature (77K) photoluminescence (PL). As a result, growth temperature around 550C, which is lower than that of GaInAsP-InP (600C), has been found to obtain good crystal quality. The critical thickness is determined to be about 30 nm from the PL and transmission electron microscopy measurements for the case of y = 0.55, corresponding to the amount strain of 1.77%. The FWHM of room temperature PL of the InAs[sub 0.55]P[sub 0.45]-InP strained-layer double-quantum-well (DQW) laser structure was as narrow as 30.1 meV, which is 3/4 of lattice matched 1.3 [mu]m GaInAsP-InP quantum well, with a peak wavelength of 1.29 [mu]m. The threshold current density of 0.41 kA/cm[sup 2] was obtained on 100 [mu]m wide broad contact SL-DQW LD's with a cavity length of 900 [mu]m. A very low threshold current of 1.8 mA was obtained in an all MOCVD grown 200 [mu]m long buried heterostructure SCH-DQW LD with high reflective coating. The maximum CW operating temperature of 120C was obtained with a low threshold current of 36 mA. The characteristic temperature was 62 K in the temperature range of 20 to 60C. A very small turn-on delay time of 200 ps was measured for a 1.8 mA threshold LD when 30 mA modulation pulse current is applied without any bias.

• OSTI ID: 5708496
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Vol. 29:6; ISSN 0018-9197
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
PERFORMANCE
ARSENIC COMPOUNDS
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
HETEROJUNCTIONS
INDIUM PHOSPHIDES
OPERATION
PHOTOLUMINESCENCE
THICKNESS
CHEMICAL COATING
DEPOSITION
DIMENSIONS
INDIUM COMPOUNDS
JUNCTIONS
LASERS
LUMINESCENCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
SURFACE COATING
426002* - Engineering- Lasers & Masers- (1990-)