Vanadium oxide thin films for bolometric applications deposited by reactive pulsed dc sputtering
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
Vanadium oxide (VO{sub x}) thin films were deposited by reactive pulse dc magnetron sputtering process using a pure vanadium metal target. The structural, microstructure, and electrical properties were correlated as a function of processing parameters such as substrate temperature, Ar:O partial pressures ratios, and pulsed dc power to fabricate these films. The VO{sub x} films deposited at various substrate temperatures between 30 and 300 degree sign C using a range of oxygen to argon partial pressure ratios exhibited huge variation in their microstructure even though most of them are amorphous to x-ray diffraction technique. In addition, the electrical properties such as temperature coefficient of resistance (TCR), resistivity, and noise levels were influenced by film microstructure. The TCRs of the VO{sub x} films were in the range of -1.1% to -2.4% K{sup -1} having resistivity values of 0.1-100 {Omega} cm. In particular, films grown at lower substrate temperatures with higher oxygen partial pressures have shown finer columnar grain structure and exhibited larger TCR and resistivity.
- OSTI ID:
- 22053516
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 27, Issue 4; Other Information: (c) 2009 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
Similar Records
Microstructural evolution of thin film vanadium oxide prepared by pulsed-direct current magnetron sputtering
Deposition of vanadium oxide films by direct-current magnetron reactive sputtering