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Title: Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.575304· OSTI ID:5312164

Vanadium dioxide is well known for the semiconductor--metal phase transition at 67 /sup 0/C which has yielded resistivity changes as high as 10/sup 5/ in single crystals. Our objective is to demonstrate that thin films with high transition resistivity ratios can be deposited at modest substrate temperatures by dc reative sputtering from a vanadium target in an O/sub 2/--Ar working gas using a planar magnetron source, because of the capabilities of this method for depositing large-area thermal control surfaces. We have obtained resistivity ratios of approx.5 x 10/sup 3/, between a semiconductor phase with a resistivity of approx.5 ..cap omega.. cm, and a metallic phase with a resistivity of approx.10/sup -3/ ..cap omega.. cm for films deposited onto borosilicate glass substrates at approx.400 /sup 0/C. X-ray diffraction showed the films to be single-phase VO/sub 2/ with a monoclinic structure. The VO/sub 2/ films are obtained for a narrow range of O/sub 2/ injection rates which correspond to conditions where cathode poisoning is just starting to occur, i.e., where the sputtered flux of vanadium, as measured by in situ optical emission spectroscopy, is decreasing and the oxygen partial pressure is increasing. Higher or lower injection rates, for a given discharge current, give films with unfavorable stoichiometry and/or structure and lower resistivity ratios during the transition.

Research Organization:
Department of Materials Science and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois, 61801
OSTI ID:
5312164
Journal Information:
J. Vac. Sci. Technol., A; (United States), Vol. 6:3
Country of Publication:
United States
Language:
English