Addendum to ''Phase selection and transition in Hf-rich hafnia-titania nanolaminates'' (on SiO{sub 2}) [J. Appl. Phys. 109, 123523 (2011)]: Hafnon formation

Journal Article · Tue May 15 00:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4719968· OSTI ID:22038971

Cisneros-Morales, Massiel Cristina; Aita, Carolyn Rubin ^[1]

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1. Department of Chemistry and Biochemistry, University of Wisconsin-Milwaukee, P.O. Box 413, Milwaukee, Wisconsin 53201 (United States)

Continued investigation of hafnia-titania nanolaminates on silica substrates after long term annealing shows that hafnon (HfSiO{sub 4}) is formed, in addition to the previously reported phases. Here, a 293 nm-thick stack of 5 nm HfO{sub 2}-4 nm TiO{sub 2} bilayers (0.51 mole fraction HfO{sub 2}) is sputter deposited on fused SiO{sub 2} and annealed in air at 1173 K for up to 192 h and then at 1273 K for up to 96 h. X-ray diffraction shows that hafnon crystallizes after 24 h at 1273 K. Micro-Raman spectroscopy/microscopy shows that hafnon crystallization is heterogeneous. No film-substrate reaction is observed for single layer HfO{sub 2} on SiO{sub 2} annealed under similar conditions. We suggest the nanolaminate's complex annealed microstructure provides fast diffusion paths that enable hafnon formation.

• OSTI ID: 22038971
• Journal Information: Journal of Applied Physics, Vol. 111, Issue 10; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
COMPOSITE MATERIALS
CRYSTALLIZATION
DEPOSITION
DIFFUSION
HAFNIUM OXIDES
HAFNIUM SILICATES
LAYERS
MICROSTRUCTURE
NANOSTRUCTURES
OPTICAL MICROSCOPY
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SILICON OXIDES
SPUTTERING
SUBSTRATES
THIN FILMS
TITANIUM OXIDES
X-RAY DIFFRACTION